The Institute of Physical Chemistry and the 斡翊笱Ч meal have developed UV LEDs with an emission wavelength of 227.5 nm. The output power is 0.15mW. Previously, other research groups have released UV LEDs with an emission wavelength of 210 nm, but the output power is only 0.02 μW. In addition to this prototype, the Institute of Physical Chemistry and the 斡翊笱Щ 晒 晒 κ 253 253 253 253 253 nm, output power is 1 mW, the emission wavelength is 261 nm, the power is 1.65 mW, the emission wavelength is 273 nm Three UV LEDs with a power of 3.3mW. The output power of these UV LEDs is roughly the same as the blue, red, and white LEDs used on the lighting, reaching a level that can be used directly as a germicidal lamp. The UV LEDs developed this time will be used in the fields of sterilization, water purification, medical treatment, and high-speed decomposition treatment of pollution-related substances, so that efficiency and power will be further improved.
The prototype UV LED uses an AlGaN-based semiconductor. First, an AlN layer is formed on the sapphire substrate, and then crystallized layer by layer to form an n-type AlGaN layer, an AlGaN light-emitting layer (3 weight sub-well structure), a p-type AlGaN layer, and the like. In order to increase the output power, the method of crystallizing the AlN layer on the sapphire substrate is also improved. The AlN layer formed by intermittently supplying ammonia gas while continuously supplying the Al material, and the AlN layer formed by continuously supplying the Al material and the ammonia gas at the same time are interleaved, thereby obtaining a plurality of AlN layers. This crystal growth method is named "ammonia gas intermittent supply multilayer growth method".
By intermittently supplying a multi-layer growth method of ammonia gas, (1) the through-dislocation density in the AlN crystal is reduced; (2) the flatness of the crystal layer is improved; and (3) the deformation in the crystal causes the occurrence of cracks to be reduced. Since the quality and flatness of the AlN layer are improved, the quality and flatness of each layer formed on the AlN layer are improved, and the AlGaN light-emitting layer is increased in luminous intensity (output power). The luminescence intensity is increased by about 50 times as compared with the AlN layer produced by the original method.
The UV LED is the development result of the mega-megawatt quantum unit research group leader Hirayama Hideki and the æ–¡ç¿Šç¬±Ð®ç ‰ã±Ð° core Ken to 淌诹田宪彦, the research institute of the Institute of Physical and Chemical Research. .
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